Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
نویسندگان
چکیده
منابع مشابه
hermal quenching of photoluminescence from Er-doped GaN thin films
The green (537 and 558 nm) and near infrared (1.54 mm) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity. Thermal quenching measurements showed that the 31 4 2 4 integrated green Er PL intensity ( S / H → I ) remained nearly constant up to 150 K, but decreased at higher temperatures 3 / 2 11 /...
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Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...
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ژورنال
عنوان ژورنال: physica status solidi (b)
سال: 2020
ISSN: 0370-1972,1521-3951
DOI: 10.1002/pssb.201900522